vishay siliconix sud50p10-43l document number: 73444 s09-1398-rev. c, 20-jul-09 www.vishay.com 1 p-channel 100-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 40 c/w. product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 100 0.043 at v gs = - 10 v - 37 54 nc 0.048 at v gs = - 4.5 v - 35 to-252 s gd to p vi e w drain connected to tab s g d p-channel mosfet ordering information : SUD50P10-43L-E3 (lead (pb)-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) b t c = 25 c i d - 37.1 a a t c = 125 c - 31 a t a = 25 c - 9.2 b, c t a = 125 c - 7.7 b, c pulsed drain current i dm - 40 continuous source current (diode conduction) t c = 25 c i s - 50 a t a = 25 c - 6.9 b, c avalanche current l = 0.1 mh i as - 35 single pulse avalanche energy e as 61 mj maximum power dissipation t c = 25 c p d 136 w t c = 70 c 95 t a = 25 c 8.3 b, c t a = 70 c 5.8 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient a t 10 s r thja 15 18 c/w steady state 40 50 junction-to-case (drain) r thjc 0.85 1.1 rohs compliant
www.vishay.com 2 document number: 73444 s09-1398-rev. c, 20-jul-09 vishay siliconix sud50p10-43l notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 100 v v ds temperature coefficient v ds /t j i d = - 250 a - 109 mv/c v gs(th) temperature coefficient v gs(th) /t j 5.9 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - 1 a v ds = - 100 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 10 v - 40 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 9.2 a 0.036 0.043 v gs = - 4.5 v, i d = - 7.7 a 0.040 0.048 forward transconductance a g fs v ds = - 15 v, i d = - 9.2 a 38 s dynamic b input capacitance c iss v ds = - 50 v, v gs = 0 v, f = 1 mhz 4600 pf output capacitance c oss 230 reverse transfer capacitance c rss 175 total gate charge q g v ds = - 50 v, v gs = - 10 v, i d = - 9.2 a 106 160 nc v ds = - 50 v, v gs = - 4.5 v, i d = - 9.2 a 54 81 gate-source charge q gs 14 gate-drain charge q gd 26 gate resistance r g f = 1 mhz 4 tu r n - o n d e l ay t i m e t d(on) v dd = - 50 v, r l = 6.5 i d ? - 7.7 a, v gen = - 10 v, r g = 1 15 25 ns rise time t r 20 30 turn-off delay time t d(off) 110 165 fall time t f 100 150 tu r n - o n d e l ay t i m e t d(on) v dd = - 50 v, r l = 6.5 i d ? - 7.7 a, v gen = - 4.5 v, r g = 1 42 65 ns rise time t r 160 240 turn-off delay time t d(off) 100 150 fall time t f 100 150 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 50 a pulse diode forward current a i sm - 40 body diode voltage v sd i s = - 7.7 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 7.7 a, di/dt = 100 a/s, t j = 25 c 60 90 ns body diode reverse recovery charge q rr 150 225 nc reverse recovery fall time t a 46 ns reverse recovery rise time t b 14
document number: 73444 s09-1398-rev. c, 20-jul-09 www.vishay.com 3 vishay siliconix sud50p10-43l typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 2 v 0.034 0.036 0.03 8 0.040 0.042 0.044 0 5 10 15 20 25 30 35 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ds(on) - on-resistance ( ) 0 2 4 6 8 10 0 204060 8 0 100 120 i d = 9.2 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 8 0 v v ds = 50 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.00.51.01.52.02.53.03.5 t a = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c 0 1000 2000 3000 4000 5000 6000 7000 0 10203040506070 8 0 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c rss 0.5 0. 8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v , 4.5 v t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized) i d = 9.2 a
www.vishay.com 4 document number: 73444 s09-1398-rev. c, 20-jul-09 vishay siliconix sud50p10-43l typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 1 10 40 0.0 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a t j - temperat u re (c) v gs(th) ( v ) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.02 0.03 0.04 0.05 0.06 0.07 0.0 8 234567 8 910 v gs - gate-to-so u rce v oltage ( v ) r ds(on) - drain-to-so u rce on-resistance ( ) t a = 25 c t a = 125 c 0 20 35 5 10 po w er ( w ) time (s) 25 10 1000 1 0.1 0.01 15 30 100 safe operating area, junction-to-ambient 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 1ms 100 ms 10 ms t a = 25 c single p u lse 100 s dc b v dss limited 10 s 1s v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d limited b yr ds(on) *
vishay siliconix sud50p10-43l document number: 73444 s09-1398-rev. c, 20-jul-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* single pulse avalance capability 0 10 20 30 40 50 0 25 50 75 100 125 150 175 i d - drain c u rrent (a) t c - case temperat u re (c) 100 0.000001 0.0001 0.01 1 10 0.00001 t a - time in a v alanche (s) i c - peak a v alanche c u rrent (a) t a l i a b v - v dd 0.001 single pulse power, junction-to-ambient 0 20 40 60 8 0 100 120 140 25 50 75 100 125 150 175 t c - case temperat u re (c) po w er
www.vishay.com 6 document number: 73444 s09-1398-rev. c, 20-jul-09 vishay siliconix sud50p10-43l typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73444 . normalized thermal transient impedance, junction-to-ambient 10 -2 0 0 0 1 0 1 1 10 -1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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